Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method

Applied Physics Letters

Volumn 100, Issue 2, 2012, Pages

  Jeong, Jaewook ^a   Kim, Joonwoo ^a   Jun Lee, Gwang ^a   Choi, Byeong Dae ^a  

^a Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BACK CHANNELS; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; NONUNIFORMITY; PARASITIC RESISTANCES; SEPARATE ANALYSIS;

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; PARAMETER EXTRACTION; PROBES; TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 84862909074     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3675876     Document Type: Article

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