Contact resistance in Schottky contact gated-four-probe a-Si thin-film transistor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 8 A, 2003, Pages

  Hattori, Reiji ^a   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Amorphous silicon; Contact resistance; Five terminal TFT structure; Gated four probe; Schottky barrier; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON TUNNELING; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

CONTACT RESISTANCE; GATE FOUR PROBE; SCHOTTKY BARRIER DRAIN CONTACT; SCHOTTKY BARRIER SOURCE CONTACT; TUNNELING CURRENT;

THIN FILM TRANSISTORS;

EID: 0141680553     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l907     Document Type: Letter

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