GaN nanorods grown on Si (111) substrates and exciton localization

Nanoscale Research Letters

Volumn 6, Issue , 2011, Pages 1-5

  Park, Young S ^a,b   Holmes, Mark J ^b   Shon, Y ^a   Yoon, Im Taek ^a   Im, Hyunsik ^a   Taylor, Robert A ^b  

^a Dongguk University   (South Korea)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

78.55.-M; BASAL STACKING FAULTS; ENHANCED SURFACE; EXCITON BOUND; EXCITON LOCALIZATION; GAN NANORODS; LOWER ENERGIES; PHONON REPLICA; SI(111) SUBSTRATE; TEMPERATURE DEPENDENCE; TIME-RESOLVED PHOTOLUMINESCENCE;

GALLIUM NITRIDE; NANORODS; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTOR COUNTERS; STACKING FAULTS;

EXCITONS;

EID: 84862908019     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-81     Document Type: Article

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