Temperature and well number dependence of exciton localization in InGaN/GaN quantum wells

Semiconductor Science and Technology

Volumn 22, Issue 12, 2007, Pages 1276-1281

  Pecharroman Gallego R ^a,b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; PARAMETER ESTIMATION; PHONONS; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS;

FRACTION OF STRONGLY LOCALIZED EXCITONS (FSLE); HUANG RHYS PARAMETERS; PHONON REPLICA INTENSITIES; POTENTIAL FLUCTUATIONS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 36448941485     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/12/006     Document Type: Article

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