HfO 2-Based RRAM devices with varying contact sizes and their electrical behavior

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 1060-1062

  Sriraman, Venkatakrishnan ^a,b   Li, Xiang ^b   Singh, Navab ^b   Lee, Sungjoo ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c Sungkyunkwan University   (South Korea)

Author keywords

Bipolar switching; resistive random access memory (RRAM); self compliance

Indexed keywords

BOTTOM ELECTRODES; CONTACT HOLES; CONTACT SIZE; DEVICE SIZES; ELECTRICAL BEHAVIORS; NITRIDE SPACERS; RESET CURRENTS; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; SCALED DEVICES; SELF-COMPLIANCE; SWITCHING CHARACTERISTICS;

PLATINUM; TITANIUM NITRIDE;

HAFNIUM OXIDES;

EID: 84862895326     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2195709     Document Type: Article

References (11)

1. W. W. Zhuang, W. Pan, B. D. Ulrich, J. J. Lee, L. Stecker, A. Burmaster, D. R. Evans, S. T. Hsu, M. Tajiri, A. Shimaoka, K. Inoue, T. Naka, N. Awaya, A. Sakiyama, Y. Wang, S. Q. Liu, and N. J. Wu, "Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)," in IEDM Tech. Dig., 2002, pp. 193-196.
2. I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, and J. T. Moon, "Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses," in IEDM Tech. Dig., San Francisco, CA, 2004, pp. 587-590. (Pubitemid 40928360)
3. C. H. Lien, Y. S. Chen, H. Y. Lee, P. S. Chen, F. T. Chen, and M.-J. Tsai, "The highly scalable and reliable hafnium oxide ReRAM and its future challenges," in Proc. IEEE ICSICT, Nov. 1-4, 2010, pp. 1084-1087.
4. L. Chen, Y. Xu, Q.-Q. Sun, H. Liu, J.-J. Gu, S.-J. Ding, and D. W. Zhang, "Highly uniform bipolar resistive switching with Al2O3 buffer layer in robust NbAlO-based RRAM," IEEE Electron Device Lett., vol. 31, no. 4, pp. 356-358, Apr. 2010.
5. Z. Fang, H. Y. Yu, X. Li, N. Singh, G. Q. Lo, and D. L. Kwong, "HfOx/TiOx/HfOx/TiOx multilayer-based forming-free RRAM devices with excellent uniformity," IEEE Electron Device Lett., vol. 32, no. 4, pp. 566-568, Apr. 2011.
6. S. Yu and H.-S. P. Wong, "A phenomenological model for the reset mechanism of metal oxide RRAM," IEEE Electron Device Lett., vol. 31, no. 12, pp. 1455-1457, Dec. 2010.
7. H. Akinaga and H. Shima, "Resistive random access memory (ReRAM) based on metal oxides," Proc. IEEE, vol. 98, no. 12, pp. 2237-2251, Dec. 2010.
8. H. Wan, X. Tian, Y. Song, W. Luo, M. Wang, Y. Wang, P. Zhou, and Y. Lin, "Electrical and testing reliability of CuxO based RRAM," in Proc. IEEE ICSICT, Nov. 1-4, 2010, pp. 1100-1102.
9. H. J. Wan, P. Zhou, L. Ye, Y. Y. Lin, T. A. Tang, H. M. Wu, and M. H. Chi, "In situ observation of compliance-current overshoot and its effect on resistive switching," IEEE Electron Device Lett., vol. 31, no. 3, pp. 246-248, Mar. 2010.
10. D. Ielmini, "Modeling the universal set/reset characteristics of bipolar RRAM by field-and temperature-driven filament growth," IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4309-4317, Dec. 2011.
11. 2-x bilayer structures," Nature Mater., vol. 10, pp. 625-630, 2011.