AlGaN/GaN HEMTs on silicon with hybrid schottky-ohmic drain for high breakdown voltage and low leakage current

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 973-975

  Lian, Yi Wei ^a   Lin, Yu Syuan ^a   Lu, Hou Cheng ^a   Huang, Yen Chieh ^a   Hsu, Shawn S H ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Breakdown voltage; GaN; high electron mobility transistors (HEMTs); leakage current; Schottky; silicon

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CURRENT PATHS; DRAIN DESIGNS; DRAIN STRUCTURE; ELECTRIC FIELD DISTRIBUTIONS; GAN; HIGH BREAKDOWN VOLTAGE; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); LOW-LEAKAGE CURRENT; ON-RESISTANCE; PROCESS STEPS; SCHOTTKY; SI SUBSTRATES; SPECIFIC-ON-RESISTANCE;

DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; SILICON; SILICON ON INSULATOR TECHNOLOGY;

DRAIN CURRENT;

EID: 84862890403     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2197171     Document Type: Article

References (12)

1. S. Arulkumaran, T. Egawa, S. Matsui, and H. Ishikawa, "Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN/GaN highelectron-mobility transistors on 4 in. diameter silicon," Appl. Phys. Lett., vol. 86, no. 12, pp. 123 503-1-123 503-3, Mar. 2005.
2. W. Saito, T. Noda,M. Kuraguchi, Y. Takada, K. Tsuda, Y. Saito, I. Omura, and M. Yamaguchi, "Effect of buffer layer structure on drain leakage current and current collapse phenomena in high-voltage GaN-HEMTs," IEEE Trans. Electron Devices, vol. 56, no. 7, pp. 1371-1376, Jul. 2009.
3. S. L. Selvaraj, T. Suzue, and T. Egawa, "Breakdown enhancement of AlGaN/GaN HEMTs on 4-in silicon by improving the GaN quality on thick buffer layers," IEEE Electron Device Lett., vol. 30, no. 6, pp. 587-589, Jun. 2009.
4. Y. C. Choi, M. Pophristic, H. Y. Cha, B. Peres, M. G. Spencer, and L. F. Eastman, "The effect of an Fe-doped GaN buffer on OFF-state breakdown characteristics in AlGaN/GaN HEMTs on Si substrate," IEEE Electron Device Lett., vol. 53, no. 12, pp. 2926-2928, Dec. 2006.
5. N. Ikeda, S. Kaya, J. Li, T. Kokawa, M. Masuda, and S. Katoh, "Highpower AlGaN/GaN MIS-HFETs with field-plates on Si substrates," in Proc. 21st Int. Symp. Power Semicond. Devices IC's, Jun. 2009, pp. 251-254.
6. I. B. Rowena, S. L. Selvaraj, and T. Egawa, "Buffer thickness contribution to suppress vertical leakage current with high breakdown field (2.3 MV/cm) for GaN on Si," IEEE Electron Device Lett., vol. 32, no. 11, pp. 1534-1536, Nov. 2011.
7. P. Srivastava, J. Das, D. Visalli, M. V. Hove, P. E.Malinowski, D. Marcon, S. Lenci, K. Geens, K. Cheng, M. Leys, S. Decoutere, R. P. Mertens, and G. Borghs, "Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2-μm buffer thickness by local substrate removal," IEEE Electron Device Lett., vol. 32, no. 1, pp. 30-32, Jan. 2011.
8. B. Lu, E. L. Piner, and T. Palacios, "Schottky-drain technology for AlGaN/GaN high-electron mobility transistors," IEEE Electron Device Lett., vol. 31, no. 4, pp. 302-304, Apr. 2010.
9. Y. Dora, A. Chakraborty, S. Heikman, L. McCarthy, S. Keller, S. P. DenBaars, and U. K. Mishra, "Effect of ohmic contacts on buffer leakage of GaN transistors," IEEE Electron Device Lett., vol. 27, no. 7, pp. 529-531, Jul. 2006. (Pubitemid 43965281)
10. E. Bahat-Treidel, R. Lossy, J.Würfl, and G. Tränkle, "AlGaN/GaN HEMT with integrated recessed Schottky-drain protection diode," IEEE Electron Device Lett., vol. 30, no. 9, pp. 901-903, Sep. 2009.
11. C. Zhou, W. Chen, E. L. Piner, and K. J. Chen, "Schottky-ohmic drain AlGaN/GaN normally off HEMT with reverse drain blocking capability," IEEE Electron Device Lett., vol. 31, no. 7, pp. 668-670, Jul. 2010.
12. Y. S. Lin, J. Y. Wu, C. Y. Chan, S. Hsu, C. F. Huang, and T. C. Lee, "Square-gate AlGaN/GaN HEMTs with improved trap-related characteristics," IEEE Trans. Electron Devices, vol. 56, no. 12, pp. 3207-3211, Dec. 2009.