N-polar GaN HEMTs with fmax > 300 GHz using high-aspect-ratio T-gate design

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 269-270

  Denninghoff, D J ^a   Dasgupta, S ^a   Brown, D F ^b   Keller, S ^a   Speck, J ^a   Mishra, U K ^a  

^a University of California   (United States)

^b Currently with HRL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ASPECT RATIO; N-POLAR GAN; N-POLAR GAN HEMT;

GALLIUM NITRIDE;

ASPECT RATIO;

EID: 84880732337     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994527     Document Type: Conference Paper

References (5)

1. Nidhi et al. 2010 ISCS "N-polar GaN-based double-recess gate MIS-HEMT technology with record fmax of 195: Pathway to improved Ka band performance".
2. Nidhi et al. 2009 IEDM "N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-artfr.La product of 16.8 GHz-llm".
3. see article and references in: S. Kolluri et al. 2011 IEEE EDL v34 "RF performance of deep-recessed N-polar GaN MIS-HEMTs using a selective etch technology without exsitu surface passivation".
4. Koolen et al. 1991 IEEE Bipolar Circuits and Technology Meeting "An improved deembedding technique for on-wafer high-frequency characterization".
5. S. Dasgupta et al. 2010 APL v96 "Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN HEMTs by In(Ga)N regrowth"