N-face high electron mobility transistors with a GaN-spacer

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 6, 2007, Pages 2049-2053

  Wong, M H ^a   Rajan, S ^a   Chu, R M ^a   Palacios, T ^a,b   Suh, C S ^a   McCarthy, L S ^a   Keller, S ^a   Speck, J S ^a   Mishra, U K ^a  

^a University of California   (United States)

^b USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPISTRUCTURE; POLARIZATION-INDUCED ELECTRIC FIELDS; RANDOM ALLOY SCATTERING;

ELECTRIC FIELD EFFECTS; ELECTRON GAS; ELECTRON MOBILITY; EPILAYERS; GALLIUM NITRIDE; INTERFACES (MATERIALS);

FIELD EFFECT TRANSISTORS;

EID: 34547233698     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674879     Document Type: Conference Paper

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