SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 41, Issue 4, 2012, Pages 741-747

Surface morphology of Sn-rich solder interconnects after electrical loading

(4) Zhu, Q S a Liu, H Y a Wang, Z G a Shang, J K a,b

a INSTITUTE OF METAL RESEARCH (China)

b University of Illinois at Urbana Champaign (United States)

Author keywords

electromigration; grain boundary groove; hillock; Solder interconnect

Indexed keywords

ELECTRICAL LOADING; ELECTROMIGRATION DAMAGE; GRAIN BOUNDARY GROOVE; GRAIN BOUNDARY GROOVES; HILLOCK; MORPHOLOGICAL CHANGES; PURE SN; SN GRAINS; SN-AG-CU; SN-AG-CU ALLOY; SOLDER INTERCONNECTS; VACANCY CONCENTRATION; WAVY SURFACE;

ALLOYING; ELECTROMIGRATION; GRAIN BOUNDARIES; PLASTIC DEFORMATION; SEGREGATION (METALLOGRAPHY); SILVER; SOLDERING ALLOYS; TIN ALLOYS;

TIN;

EID: 84862831173 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-012-1932-x Document Type: Article

Times cited : (7)

References (20)

1
- 0037076832
- 10.1016/S0927-796X(02)00007-4
- K Zeng KN Tu 2002 Mater. Sci. Eng. R. 38 55 10.1016/S0927-796X(02)00007-4
- (2002) Mater. Sci. Eng. R. , vol.38 , pp. 55
- Zeng, K.¹ Tu, K.N.²

2
- 0242552155
- 10.1063/1.1611263 1:CAS:528:DC%2BD3sXosVeitbs%3D
- KN Tu 2003 J. Appl. Phys. 94 5451 10.1063/1.1611263 1:CAS:528: DC%2BD3sXosVeitbs%3D
- (2003) J. Appl. Phys. , vol.94 , pp. 5451
- Tu, K.N.¹

3
- 77349122538
- 10.1016/j.pmatsci.2010.01.001 1:CAS:528:DC%2BC3cXjtFSisbs%3D
- YC Chan D Yang 2010 Prog. Mater. Sci. 55 428 10.1016/j.pmatsci.2010.01. 001 1:CAS:528:DC%2BC3cXjtFSisbs%3D
- (2010) Prog. Mater. Sci. , vol.55 , pp. 428
- Chan, Y.C.¹ Yang, D.²

4
- 33845673238
- 10.1016/j.scriptamat.2006.10.043 1:CAS:528:DC%2BD28XhtlCltrzK
- L Zhang ZG Wang JK Shang 2007 Scripta Mater. 56 381 10.1016/j.scriptamat. 2006.10.043 1:CAS:528:DC%2BD28XhtlCltrzK
- (2007) Scripta Mater. , vol.56 , pp. 381
- Zhang, L.¹ Wang, Z.G.² Shang, J.K.³

5
- 77958134724
- 10.1557/JMR.2010.0143
- HY Liu QS Zhu L Zhang ZG Wang JK Shang 2010 J. Mater. Res. 5 1172 10.1557/JMR.2010.0143
- (2010) J. Mater. Res. , vol.5 , pp. 1172
- Liu, H.Y.¹ Zhu, Q.S.² Zhang, L.³ Wang, Z.G.⁴ Shang, J.K.⁵

6
- 78650177806
- 10.1016/j.msea.2010.10.100
- HY Liu QS Zhu ZG Wang JK Shang 2011 Mater. Sci. Eng. A 528 1467 10.1016/j.msea.2010.10.100
- (2011) Mater. Sci. Eng. A , vol.528 , pp. 1467
- Liu, H.Y.¹ Zhu, Q.S.² Wang, Z.G.³ Shang, J.K.⁴

7
- 33749457152
- 10.1063/1.2358113
- F Ren JW Nah KN Tu BS Xiong LH Xu HL Pang 2006 Appl. Phys. Lett. 89 141914 10.1063/1.2358113
- (2006) Appl. Phys. Lett. , vol.89 , pp. 141914
- Ren, F.¹ Nah, J.W.² Tu, K.N.³ Xiong, B.S.⁴ Xu, L.H.⁵ Pang, H.L.⁶

8
- 77957073200
- 10.1016/S1005-0302(10)60116-8
- XJ Wang QS Zhu ZG Wang JK Shang 2010 J. Mater. Sci. Technol. 26 737 10.1016/S1005-0302(10)60116-8
- (2010) J. Mater. Sci. Technol. , vol.26 , pp. 737
- Wang, X.J.¹ Zhu, Q.S.² Wang, Z.G.³ Shang, J.K.⁴

9
- 84862780631
- San Jose, CA
- S. Branderburg and S. Yeh, Proceeding of Surface Mount International Conference and Exposition, San Jose, CA (1998).
- (1998) Proceeding of Surface Mount International Conference and Exposition
- Branderburg, S.¹ Yeh, S.²

10
- 28044438993
- 10.1007/s11664-005-0191-5 1:CAS:528:DC%2BD2MXht1Wru7%2FF
- QL Yang JK Shang 2005 J. Electron. Mater. 34 1363 10.1007/s11664-005- 0191-5 1:CAS:528:DC%2BD2MXht1Wru7%2FF
- (2005) J. Electron. Mater. , vol.34 , pp. 1363
- Yang, Q.L.¹ Shang, J.K.²

11
- 0242468675
- 10.1557/JMR.2003.0355 1:CAS:528:DC%2BD3sXovFWmtL0%3D
- YC Hu YH Lin CR Kao KN Tu 2003 J. Mater. Res. 18 2544 10.1557/JMR.2003.0355 1:CAS:528:DC%2BD3sXovFWmtL0%3D
- (2003) J. Mater. Res. , vol.18 , pp. 2544
- Hu, Y.C.¹ Lin, Y.H.² Kao, C.R.³ Tu, K.N.⁴

12
- 14544277886
- 10.1016/j.actamat.2005.01.014 1:CAS:528:DC%2BD2MXhslKnsrY%3D
- YH Lin YC Hu CR Kao KN Tu 2005 Acta Mater. 53 2029 10.1016/j.actamat. 2005.01.014 1:CAS:528:DC%2BD2MXhslKnsrY%3D
- (2005) Acta Mater. , vol.53 , pp. 2029
- Lin, Y.H.¹ Hu, Y.C.² Kao, C.R.³ Tu, K.N.⁴

13
- 26844565117
- 10.1016/j.actamat.2005.07.016 1:CAS:528:DC%2BD2MXhtFShsrvP
- WJ Boettinger CE Johnson LA Bendersky KW Moon ME Williams GR Stafford 2005 Acta Mater. 53 5033 10.1016/j.actamat.2005.07.016 1:CAS:528: DC%2BD2MXhtFShsrvP
- (2005) Acta Mater. , vol.53 , pp. 5033
- Boettinger, W.J.¹ Johnson, C.E.² Bendersky, L.A.³ Moon, K.W.⁴ Williams, M.E.⁵ Stafford, G.R.⁶

14
- 20444462371
- 10.1063/1.1861151
- H Gan KN Tu 2005 J. Appl. Phys. 97 063514 10.1063/1.1861151
- (2005) J. Appl. Phys. , vol.97 , pp. 063514
- Gan, H.¹ Tu, K.N.²

15
- 41349111470
- 10.1063/1.2901155
- AT Wu TC Hsieh 2008 Appl. Phys. Lett. 92 121921 10.1063/1.2901155
- (2008) Appl. Phys. Lett. , vol.92 , pp. 121921
- Wu, A.T.¹ Hsieh, T.C.²

16
- 7544234470
- 10.1063/1.1795353 1:CAS:528:DC%2BD2cXotVKgu7k%3D
- AT Wu KN Tu JR Lloyd N Tamura BC Valek CR Kao 2004 Appl. Phys. Lett. 85 2490 10.1063/1.1795353 1:CAS:528:DC%2BD2cXotVKgu7k%3D
- (2004) Appl. Phys. Lett. , vol.85 , pp. 2490
- Wu, A.T.¹ Tu, K.N.² Lloyd, J.R.³ Tamura, N.⁴ Valek, B.C.⁵ Kao, C.R.⁶

17
- 34247241706
- 10.1063/1.2721136
- HY Hsiao C Chen 2007 Appl. Phys. Lett. 90 152105 10.1063/1.2721136
- (2007) Appl. Phys. Lett. , vol.90 , pp. 152105
- Hsiao, H.Y.¹ Chen, C.²

18
- 33646681929
- 10.1063/1.2192694
- AT Huang AM Gusak KN Tu YS Lai 2006 Appl. Phys. Lett. 88 141911 10.1063/1.2192694
- (2006) Appl. Phys. Lett. , vol.88 , pp. 141911
- Huang, A.T.¹ Gusak, A.M.² Tu, K.N.³ Lai, Y.S.⁴

19
- 35448940405
- 10.1063/1.1710127 1:CAS:528:DyaF1cXmsV2q
- BF Dyson TR Anthony D Turnbull 1967 J. Appl. Phys. 38 3408 10.1063/1.1710127 1:CAS:528:DyaF1cXmsV2q
- (1967) J. Appl. Phys. , vol.38 , pp. 3408
- Dyson, B.F.¹ Anthony, T.R.² Turnbull, D.³

20
- 0000643191
- 10.1103/PhysRevB.49.2030 1:CAS:528:DyaK2cXhsVWit7g%3D
- KN Tu 1994 Phys. Rev. B-Condens. Matter 49 2030 10.1103/PhysRevB.49.2030 1:CAS:528:DyaK2cXhsVWit7g%3D
- (1994) Phys. Rev. B-Condens. Matter , vol.49 , pp. 2030
- Tu, K.N.¹

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