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Volumn 526, Issue , 2012, Pages 119-124
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Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots
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Author keywords
GaN capping; InN QDs; Photoluminescence; Strain
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Indexed keywords
CAPPING LAYER;
CAPPING THICKNESS;
COMPRESSIVE STRAIN;
GAN CAPPING;
INN QDS;
KINETIC ROUGHENING;
LINEWIDTH NARROWING;
PHOTOLUMINESCENCE PROPERTIES;
PL INTENSITY;
PL SPECTRA;
RED SHIFT;
RED-SHIFTED;
ROUGHENED SURFACES;
SINGLE LAYER;
SINGLE-CRYSTALLINE;
SPACER LAYER;
SPACER THICKNESS;
SURFACE ELECTRON;
THREE-LAYER;
DEFECT DENSITY;
PHOTOLUMINESCENCE;
SEMICONDUCTOR QUANTUM DOTS;
STRAIN;
GALLIUM NITRIDE;
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EID: 84862822073
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2012.01.158 Document Type: Article |
Times cited : (8)
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References (21)
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