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Volumn 526, Issue , 2012, Pages 119-124

Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

Author keywords

GaN capping; InN QDs; Photoluminescence; Strain

Indexed keywords

CAPPING LAYER; CAPPING THICKNESS; COMPRESSIVE STRAIN; GAN CAPPING; INN QDS; KINETIC ROUGHENING; LINEWIDTH NARROWING; PHOTOLUMINESCENCE PROPERTIES; PL INTENSITY; PL SPECTRA; RED SHIFT; RED-SHIFTED; ROUGHENED SURFACES; SINGLE LAYER; SINGLE-CRYSTALLINE; SPACER LAYER; SPACER THICKNESS; SURFACE ELECTRON; THREE-LAYER;

EID: 84862822073     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.01.158     Document Type: Article
Times cited : (8)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.