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Journal of Electronic Materials

Volumn 41, Issue 5, 2012, Pages 895-898

Solution-processed high-k dielectric, ZrO 2, and integration in thin-film transistors

(2) Lee, Chen Guan a Dodabalapur, Ananth a

a The University of Texas at Austin (United States)

Author keywords

Solution process; Subthreshold swing; Zinc tin oxide; Zirconium oxide

Indexed keywords

ANNEALING TEMPERATURES; CAPACITANCE DENSITY; CHEMICAL CHARACTERIZATION; DIELECTRIC/SEMICONDUCTOR INTERFACE; FABRICATION COST; HIGH-K DIELECTRIC; INSULATOR CAPACITANCE; OPERATING VOLTAGE; PROCESS TEMPERATURE; SATURATION MOBILITY; SOLUTION PROCESS; SOLUTION-PROCESSED; SUBTHRESHOLD SWING; TUNNELING CURRENT; ZINC TIN OXIDE;

DIELECTRIC PROPERTIES; OXIDES; SEMICONDUCTING ORGANIC COMPOUNDS; SOL-GEL PROCESS; THIN FILM TRANSISTORS; TIN; TIN OXIDES; ZINC; ZIRCONIA;

ZIRCONIUM ALLOYS;

EID: 84862809329 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-012-1905-0 Document Type: Article

Times cited : (48)

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