Low-operating-voltage polymeric transistor with solution-processed low-k polymer/high-k metal-oxide bilayer insulators

Organic Electronics

Volumn 9, Issue 5, 2008, Pages 925-929

  Yang, Feng Yu ^a   Chang, Kuo Jui ^b   Hsu, Meei Yu ^a   Liu, Cheng Chin ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Dielectric; Field effect transistor; Nanoparticle; Organic

Indexed keywords

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GRAIN BOUNDARIES; HIGH-K DIELECTRIC; LOW-K DIELECTRIC; MAGNETIC SEMICONDUCTORS; METALS; NANOPARTICLES; POLYMER FILMS; SINTERING; TEMPERATURE; THRESHOLD VOLTAGE; TITANIUM DIOXIDE; TRANSISTORS;

BILAYER INSULATORS; DIELECTRIC SURFACE; HIGH-TEMPERATURE SINTERING; LOW OPERATING VOLTAGE; ORGANIC; POLYMERIC SEMICONDUCTORS; POLYMERIC TRANSISTORS; SOLUTION-PROCESSED;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 50949108253     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2008.06.002     Document Type: Article

References (22)

1. Sirringhaus H., Kawase T., Friend R.H., Shimoda T., Inbasekaran M., Wu W., and Woo E.P. Science 290 (2000) 2123
2. Chua L.-L., Zaumseil J., Chang J.-F., Ou E.C.W., Ho P.K.H., Sirringhaus H., and Friend R.h. Nature 434 (2005) 194
3. Crone B., Dodabalapur A., Lin Y.-Y., Filas R.W., Bao Z., LaDuca A., Sarpeshkar R., Katz H.E., and Li W. Nature 403 (2000) 521
4. Burroughes J.H., Bradley D.D.C., Brown A.R., Marks R.N., Mackay K., Friend R.H., Burns P.L., and Holmes A.B. Nature 347 (1990) 539
5. Herlogsson L., Crispin X., Robinson N.D., Sandberg M., Hagel O.-J., Gustafsson G., and Berggren M. Adv. Mater. 19 (2007) 97
6. Facchetti A., Yoon M.H., and Marks T.J. Adv. Mater. 17 (2005) 1705
7. Chua L.L., Ho P.K.H., Sirringhaus H., and Friend R.H. Appl. Phys. Lett. 84 (2004) 3400
8. Yoon M.H., Yan H., Facchetti A., and Marks T.J. J. Am. Chem. Soc. 127 (2005) 10388
9. yang S.Y., Kim S.H., Shin K., Jeon H., and Park C.F. Appl. Phys. Lett. 88 (2006) 173507
10. Halik M., Klauk H., Zschieschang U., Schmid G., Dehm C., Schutz M., Maisch S., Effenberger F., Brunnbauer M., and Stellacci F. Nature 431 (2004) 963
11. Dimitrakopoulos C.D., Purushothaman S., Kymissis J., Callegari A., and Shaw J.M. Science 283 (1999) 822
12. Majewski L.A., Schroeder R., and Grell M. Adv. Funct. Mater. 15 (2005) 1017
13. Wang G., Moses D., Heeger A.J., Zhang H.-M., Narasimhan M., and Demaray R.E. J. Appl. Phys. 95 (2004) 316
14. Lee J., Kim J.H., and Im S. Appl. Phys. Lett. 29 (2003) 2689
15. Kim C.S., Jo S.J., Lee S.W., Kim W.J., and Baik H.K. Appl. Phys. Lett. 88 (2006) 243515
16. Veres J., Ogier S.D., Lloyd G., and de Leeuw D.M. Chem. Mater. 16 (2004) 4543
17. Veres J., Ogier S.D., Leeming S.W., Cupertino D.C., and Khaffaf S.M. Adv. Funct. Mater. 13 (2003) 199
18. Cozzoli P.D., Kornowski A., and Weller H. J. Am. Chem. Soc. 125 (2003) 14539
19. Lim S.C., Kim S.H., Lee J.H., Kim M.K., Kim D.J., and Zyung T. Synthetic Met. 148 (2005) 75
20. Noh Y.H., Park S.Y., Seo S.M., and Lee H.H. Org. Electronics. 7 (2006) 271
21. J. Jang, S.H. Han, SID Int. Symp. Digest Tech. Papers 37 (2006) 108.
22. Park S.Y., Park M., and Lee H.H. Appl. Phys. Lett. 85 (2004) 2283