Dry etch properties of IZO thin films in a CF 4/Ar adaptively coupled plasma system

Vacuum

Volumn 86, Issue 9, 2012, Pages 1336-1340

  Woo, Jong Chang ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

CF 4; Etching; Field emission Auger electron spectroscopy; Indium zinc oxide; X ray photoelectron spectroscopy

Indexed keywords

COUPLED PLASMA; DRY-ETCH; ETCH RATES; ETCHING PARAMETERS; FIELD EMISSION AUGER ELECTRON SPECTROSCOPY; INDIUM ZINC OXIDE; INDIUM ZINC OXIDES; MIXTURE RATIO; OXIDE BONDS; VOLATILE REACTIONS; X RAY PHOTOELECTRON SPECTROSCOPIES (XPS);

AUGER ELECTRON SPECTROSCOPY; DESORPTION; ETCHING; FIELD EMISSION; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; REACTION PRODUCTS; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 84862807222     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2011.12.020     Document Type: Conference Paper

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