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Volumn 97, Issue 1, 2010, Pages

Impact of applied strain on the electron transport through ferroelectric tunnel junctions

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED STRAIN; EFFECTIVE POTENTIALS; ELECTRON TRANSPORT; ELECTRONIC TRANSPORT PROPERTIES; ELECTRORESISTANCE; EXTERNAL STRAINS; FERROELECTRIC BARRIERS; FERROELECTRIC TUNNEL JUNCTIONS; NON-EQUILIBRIUM GREEN'S FUNCTION; PT ELECTRODE; TRANSPORT DIRECTION;

EID: 77954748910     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3462070     Document Type: Article
Times cited : (15)

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    • A plane-wave basis set was used for the electron wave function with the cutoff energy of 400 eV. The Brillouin Zone integrations were carried out with a 8×8×1 Monkhorst-Pack k-point mesh together with a 0.2 eV Gaussian broadening. The configuration is considered as relaxed until the maximum Hellman-Feynman force acting on each atom is less than 0.01 eV/
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.