Atomic layer deposition of ZnO on thermal SiO 2 and Si surfaces using N 2 -diluted diethylzinc and H 2 O 2 precursors

Applied Surface Science

Volumn 258, Issue 10, 2012, Pages 4657-4666

  Qian, Ke Jia ^a   Chen, Sun ^a   Zhu, Bao ^a   Chen, Lin ^a   Ding, Shi Jin ^a   Lu, Hong Liang ^a   Sun, Qing Qing ^a   Zhang, David Wei ^a   Chen, Zhenyi ^b  

^a FUDAN UNIVERSITY   (China)

^b SHANGHAI UNIVERSITY   (China)

Author keywords

Atomic layer deposition (ALD); Nano crystalline film; Nanodots; ZnO

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; CRYSTALLITE SIZE; II-VI SEMICONDUCTORS; NANODOTS; SILICA; TEMPERATURE; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

CORRUGATED SURFACES; DEPOSITION TEMPERATURES; ENERGY POINT; GROWING SURFACES; NANO-CRYSTALLINE FILMS; NUCLEATION SITES; PREFERENTIAL GROWTH; THERMAL SIO2;

SILICON;

EID: 84862794614     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.01.054     Document Type: Article

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