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Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 3007-3009

Dot-height dependence of photoluminescence from ZnO quantum dots

(6) Nakamura, Atsushi a Okamatsu, Kota a Tawara, Takehiko b Gotoh, Hideki b Temmyo, Jiro a Matsui, Yoshio c

a SHIZUOKA UNIVERSITY (Japan)

b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

Dimensionality; Exciton confinement; Nanodot; Remote plasma enhanced MOCVD; ZnO

Indexed keywords

EMISSION SPECTROSCOPY; LIGHT EMISSION; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA DEPOSITION; PLASMAS; QUANTUM ELECTRONICS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON COMPOUNDS; ZINC ALLOYS; ZINC OXIDE;

DIMENSIONALITY; EXCITON CONFINEMENT; NANODOT; REMOTE-PLASMA-ENHANCED MOCVD; ZNO;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 54249119127 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.3007 Document Type: Article

Times cited : (11)

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