Correlation between evolution of resistive switching and oxygen vacancy configuration in La 0.5Ca 0.5MnO 3 based memristive devices

Nanotechnology

Volumn 23, Issue 26, 2012, Pages

  Wang, Zhi Hong ^a   Yang, Yang ^a   Gu, Lin ^a   Habermeier, H U ^b   Yu, Ri Cheng ^a   Zhao, Tong Yun ^a   Sun, Ji Rong ^a   Shen, Bao Gen ^a  

^a INSTITUTE OF PHYSICS   (China)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATION-CORRECTED; ELECTRICAL PULSE; HIGH RESISTIVE STATE; METAL-TO-INSULATOR TRANSITIONS; OXYGEN MIGRATION; RESISTIVE SWITCHING; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SWITCHING CYCLES;

MANGANESE OXIDE; MEMRISTORS; METAL INSULATOR TRANSITION; SWITCHING SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY;

OXYGEN VACANCIES;

EID: 84862656038     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/26/265202     Document Type: Article

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