Fabrication of high efficiency III-V quantum nanostructures at low thermal budget on Si

Applied Physics Letters

Volumn 95, Issue 24, 2009, Pages

  Bietti, S ^a   Somaschini, C ^a   Sanguinetti, S ^a   Koguchi, N ^a   Isella, G ^b   Chrastina, D ^b  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BACK-END INTEGRATION; DROPLET EPITAXY; GAAS SUBSTRATES; GAAS/ALGAAS; HIGH EFFICIENCY; INTERSUBBAND DETECTORS; LIGHT EMITTING DEVICES; LOW THERMAL BUDGET; MIGRATION ENHANCED EPITAXY; OPTICAL EFFICIENCY; QUANTUM DOT MATERIALS; QUANTUM NANOSTRUCTURES; SILICON SUBSTRATES; STATE OF THE ART; WHOLE PROCESS;

BUDGET CONTROL; EPITAXIAL GROWTH; GALLIUM ALLOYS; NANOSTRUCTURES; QUANTUM THEORY; SILICON DETECTORS; SUBSTRATES;

QUANTUM EFFICIENCY;

EID: 77949408326     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3273860     Document Type: Article

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