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Applied Physics Letters

Volumn 98, Issue 10, 2011, Pages

Individual GaAs quantum emitters grown on Ge substrates

(8) Cavigli, L a Abbarchi, M a,c Bietti, S b Somaschini, C b Sanguinetti, S b Koguchi, N b Vinattieri, A a Gurioli, M a

a UNIVERSITY OF FLORENCE (Italy)

b UNIVERSITY OF MILANO BICOCCA (Italy)

c ECOLE NORMALE SUPÉRIEURE (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; GALLIUM ARSENIDE; GERMANIUM; III-V SEMICONDUCTORS; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

DROPLET EPITAXY; GAAS SUBSTRATES; MICRO AND MACRO; OPTICAL QUALITIES; PHOTOLUMINESCENCE ANALYSIS; QUANTUM EMITTERS; SEMICONDUCTOR SUBSTRATE; STATE OF THE ART;

SUBSTRATES;

EID: 79952661817 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3560303 Document Type: Article

Times cited : (18)

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