Near infrared image sensor with integrated germanium photodiodes.

Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

  Kaufmann, R ^a   Isella, G ^b   Sanchez Amores, A ^c   Neukom, S ^a,d   Neels, A ^a   Neumann, L ^a   Brenzikofer, A ^a   Dommann, A ^a   Urban, C ^a   Von Kanel H ^b,e  

^a CSEM   (Switzerland)

^b POLITECNICO DI MILANO   (Italy)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^d Neukom Consulting   (Switzerland)

^e ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP ABSORPTION; CMOS PROCESSS; MEASUREMENT RESULTS; MONOLITHICALLY INTEGRATED; NEAR INFRARED; ROOM TEMPERATURE;

CMOS INTEGRATED CIRCUITS; GERMANIUM; HETEROJUNCTIONS; IMAGE SENSORS; IMAGING SYSTEMS; INFRARED DEVICES; INFRARED IMAGING; INTEGRATION; SENSORS; TENSILE STRAIN;

PHOTODIODES;

EID: 79961107627     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3608245     Document Type: Article

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