In0.69Al0.31As0.41Sb0.59/ In0.27Ga0.73Sb double-heterojunction bipolar transistors with InAs0.66Sb0.34 contact layers

Electronics Letters

Volumn 46, Issue 19, 2010, Pages 1333-1335

  Champlain, J G ^a   Magno, R ^a   Bass, R ^a   Park, D ^a   Boos, J B ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLLECTOR CURRENT DENSITY; CONTACT LAYERS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; EXCELLENT PERFORMANCE; HIGH BREAKDOWN VOLTAGE; INAS; MAXIMUM FREQUENCY OF OSCILLATIONS;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; CUTOFF FREQUENCY; GALLIUM; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING INDIUM; SWITCHING CIRCUITS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 77956863365     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.1727     Document Type: Article

References (8)

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6. 0.34 ', Electron. Lett., 2007, 43, p. 1315-1317 0013-5194
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