SCOPUS 정보 검색 플랫폼

Volumn 92, Issue 6, 2008, Pages

High quality InAsSb grown on InP substrates using AlSbAlAsSb buffer layers

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; ELECTRON MOBILITY; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SUBSTRATES;

MISFIT DEFECT DENSITY; ROOM TEMPERATURE; SEMICONDUCTOR ALLOYS;

INDIUM COMPOUNDS;

EID: 39349115515 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2836947 Document Type: Article

Times cited : (9)

References (8)

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