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Volumn 457-460, Issue I, 2004, Pages 735-738

Growth and characterisation of heavily Al-doped 4H-SiC layers grown by VLS in an Al-Si melt

(9) Jacquier, C a Ferro, G a Balloud, C b Zielinski, M b Camassel, J b Polychroniadis, E d Stoemenos, J c Cauwet, F a Monteil, Y a

a UNIVERSITÉ CLAUDE BERNARD LYON 1 (France)

b UNIVERSITÉ MONTPELLIER 2 (France)

c ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

d NONE

Author keywords

Al doping; Low temperature deposition; Vapour Liquid Solid epitaxy

Indexed keywords

ALUMINUM; CHARACTERIZATION; DEPOSITION; FILM GROWTH; LOW TEMPERATURE EFFECTS; MELTING; MIXTURES; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; SILICON CARBIDE;

LOW TEMPERATURE DEPOSITION; VAPOR-LIQUID-SOLID EPITAXY;

SEMICONDUCTING FILMS;

EID: 8744310008 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.735 Document Type: Conference Paper

Times cited : (8)

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