Temperature dependence of a slow component of excess carrier decay curves

Solid-State Electronics

Volumn 50, Issue 11-12, 2006, Pages 1761-1766

  Ichimura, Masaya ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Carrier decay curve; Carrier lifetime; Minority carrier trap; Temperature dependence

Indexed keywords

ELECTRON TRAPS; GALLIUM NITRIDE; PHOTOCONDUCTIVITY; SILICON CARBIDE; TEMPERATURE DISTRIBUTION;

CARRIER DECAY CURVE; CARRIER LIFETIME; MINORITY CARRIER TRAP; TEMPERATURE DEPENDENCE;

CHARGE CARRIERS;

EID: 33751221651     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.10.001     Document Type: Article

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