40 μm flip-chip process using Ag-in transient liquid phase reaction

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 2, Issue 6, 2012, Pages 903-908

  Lin, Wen P ^a   Sha, Chu Hsuan ^a   Lee, Chin C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Electronic packaging; flip chip; flip chip interconnect; flip chip technology; fluxless bonding; indium; silver

Indexed keywords

BINARY SYSTEMS; CROSS-SECTIONAL SCANNING ELECTRON MICROSCOPIES; CU SUBSTRATE; ELECTRONIC PACKAGING; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; FLIP CHIP; FLIP CHIP TECHNOLOGIES; FLIP-CHIP JOINTS; FLUXLESS BONDING; LEAD FREE SOLDERS; LONG-TERM OPERATION; PROCESS TEMPERATURE; REFLOW TEMPERATURES; SI CHIPS; SI WAFER; SOLID SOLUTION PHASE; SOLIDUS TEMPERATURE; TRANSIENT LIQUID PHASE;

CHROMIUM; ELECTRONICS PACKAGING; ENERGY DISPERSIVE SPECTROSCOPY; FLIP CHIP DEVICES; GOLD COATINGS; INDIUM; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON WAFERS; SOLDERING ALLOYS; TIN;

SILVER;

EID: 84861931521     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2012.2186572     Document Type: Article

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