Bonding of Bi2Te3 chips to alumina using Ag-In system for high temperature applications

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2011, Pages 118-124

  Lin, Wen P ^a   Lee, Chin C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Ag In bonding; barrier layer; Bismuth telluride; chemical reaction bonding; fluxless bonding; thermoelectric; Ti Au

Indexed keywords

AG-IN BONDING; BARRIER LAYERS; BISMUTH TELLURIDE; FLUXLESS BONDING; THERMOELECTRIC;

BISMUTH; BISMUTH ALLOYS; BISMUTH COMPOUNDS; GOLD; GOLD COATINGS; HIGH TEMPERATURE APPLICATIONS; HIGH TEMPERATURE OPERATIONS; MELTING POINT; METAL MELTING; PHASE TRANSITIONS; SILVER; THERMAL EXPANSION; THERMOELECTRICITY; TITANIUM;

SILVER ALLOYS;

EID: 79960409026     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2011.5898501     Document Type: Conference Paper

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