Effects of annealing on morphological, structural and electrical properties of thermally evaporated WO 3 thin films

Superlattices and Microstructures

Volumn 52, Issue 2, 2012, Pages 326-335

  Usta, Metin ^a   Kahraman, Süleyman ^a   Bayansal, Fatih ^a   Çetinkara, Haci A ^a  

^a MUSTAFA KEMAL UNIVERSITY   (Turkey)

Author keywords

AFM; Thermal evaporation; Thin film; XRD

Indexed keywords

AFM; ANNEALED FILMS; ANNEALING TEMPERATURES; CALCULATED VALUES; CRYSTALLIZED STRUCTURE; CRYSTALLOGRAPHIC STRUCTURE; CURRENT-VOLTAGE MEASUREMENTS; DARK CURRENT-VOLTAGE; ELEVATED TEMPERATURE; GRAIN SIZE; HIGHER TEMPERATURES; MONOCLINIC PHASE; QUARTZ SUBSTRATE; RESISTIVITY PROPERTIES; ROOM TEMPERATURE; STRUCTURAL AND ELECTRICAL PROPERTIES; THERMAL EVAPORATION METHOD; TUNGSTEN TRIOXIDE; XRD; XRD PATTERNS;

AMORPHOUS FILMS; ANNEALING; FILM PREPARATION; QUARTZ; SEMICONDUCTING FILMS; THERMAL EVAPORATION; THIN FILMS; TUNGSTEN; VOLTAGE MEASUREMENT;

ELECTRIC PROPERTIES;

EID: 84861918661     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2012.05.008     Document Type: Article

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