SCOPUS 정보 검색 플랫폼

Volumn 100, Issue 21, 2012, Pages

High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes

(6) Leroy, J a Crunteanu, A a Bessaudou, A a Cosset, F a Champeaux, C b Orlianges, J C b

a UNIVERSITY OF LIMOGES (France)

b UNIVERSITY OF LIMOGES (France)

Author keywords

[No Author keywords available]

Indexed keywords

COST-EFFECTIVE METHODS; DEVICE TEMPERATURE; HIGH-SPEED; NANOGAP ELECTRODES; NANOSTRUCTURED MORPHOLOGY; PULSED VOLTAGES; SHADOW EVAPORATION; SWITCHING TIME; TWO-TERMINAL DEVICES; VANADIUM DIOXIDE FILM;

PHOTOLITHOGRAPHY; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84861793556 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4721520 Document Type: Article

Times cited : (124)

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