Voltage-pulse-induced switching dynamics in VO2 thin-film devices on silicon

IEEE Electron Device Letters

Volumn 32, Issue 11, 2011, Pages 1582-1584

  Seo, Giwan ^a   Kim, Bong Jun ^b   Ko, Changhyun ^c   Cui, Yanjie ^c   Lee, Yong Wook ^d   Shin, Jun Hwan ^a   Ramanathan, Shriram ^c   Kim, Hyun Tak ^d  

^a University of Science and Technology (UST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c HARVARD UNIVERSITY   (United States)

^d Pukyong National University   (South Korea)

Author keywords

Metal insulator transition (MIT); MIT switching characteristics; Oxide electronics; Vanadium dioxide; VO2

Indexed keywords

CONTINUOUS VOLTAGES; DELAY TIME; ENDURANCE TEST; EXTERNAL RESISTANCE; INSULATING STATE; METALLIC STATE; MIT SWITCHING CHARACTERISTICS; OUT-OF-PLANE; OXIDE ELECTRONICS; RISING TIME; SWITCHING DYNAMICS; TRANSITION LAYERS; VANADIUM DIOXIDE; VO2;

ELECTRIC POTENTIAL; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILM DEVICES; VANADIUM;

METAL INSULATOR TRANSITION;

EID: 80055019352     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2163922     Document Type: Article

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