Optimization in fabricating bismuth telluride thin films by ion beam sputtering deposition

Thin Solid Films

Volumn 520, Issue 16, 2012, Pages 5245-5248

  Zheng, Z H ^a   Fan, P ^a   Chen, T B ^a   Cai, Z K ^a   Liu, P J ^a   Liang, G X ^a   Zhang, D P ^a   Cai, X M ^a  

^a SHENZHEN UNIVERSITY   (China)

Author keywords

Bismuth telluride; Deposition temperature; Ion beam sputtering; Thermoelectric material; Thin films

Indexed keywords

AVERAGE GRAIN SIZE; BISMUTH TELLURIDE; BISMUTH TELLURIDE THIN FILMS; BK7 GLASS; DEPOSITION TEMPERATURES; ELECTRICAL CONDUCTIVITY; ION BEAM SPUTTERING DEPOSITION; ION BEAM SPUTTERING METHODS; ION-BEAM SPUTTERING; OPTIMAL POWER; ROOM TEMPERATURE; THERMOELECTRIC MATERIAL; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC PROPERTIES; THERMOELECTRIC THIN FILMS; VARIOUS SUBSTRATES;

ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; OPTIMIZATION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; THIN FILMS; X RAY DIFFRACTION;

BISMUTH COMPOUNDS;

EID: 84861751503     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.03.086     Document Type: Article

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