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Thin Solid Films

Volumn 315, Issue 1-2, 1998, Pages 99-103

MOCVD growth of Bi2Te3 layers using diethyltellurium as a precursor

(5) Giani, A a Boulouz, A a Pascal Delannoy, F a Foucaran, A a Boyer, A a

a UNIVERSITÉ MONTPELLIER II (France)

Author keywords

Alloys; Bismuth; Chemical vapour deposition (CVD); Tellurium

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; FILM PREPARATION; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTOR GROWTH; TELLURIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION;

BISMUTH TELLURIDE; DIETHYLTELLURIUM;

SEMICONDUCTING FILMS;

EID: 0032473231 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00792-X Document Type: Article

Times cited : (67)

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