SCOPUS 정보 검색 플랫폼

Volumn 38, Issue 7, 2009, Pages 920-924

Fabrication of bismuth telluride-based alloy thin film thermoelectric devices grown by metal organic chemical vapor deposition

(4) Kwon, Sung Do a Ju, Byeong Kwon b Yoon, Seok Jin a Kim, Jin Sang a

a Korea Institute of Science and Technology (South Korea)

b Korea University (South Korea)

Author keywords

Bismuth telluride; Generator; MOCVD; Seebeck coefficient; Thermoelectric; Thin film

Indexed keywords

BISMUTH TELLURIDE; COMPLEX STRUCTURE; CONDUCTION TYPE; GENERATOR; HEATING BLOCKS; METAL ORGANIC; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; P-TYPE; TEMPERATURE DIFFERENCES; THERMOELECTRIC; THERMOELECTRIC DEVICES; THERMOELECTRIC ELEMENT; THERMOELECTRIC GENERATORS; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; THIN FILM MATERIAL; VOLTAGE OUTPUT;

ANTIMONY; BISMUTH; ELECTRIC POTENTIAL; ENERGY CONVERSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEEBECK COEFFICIENT; TELLURIUM COMPOUNDS; THERMOELECTRIC EQUIPMENT; THIN FILM DEVICES; THIN FILMS; VAPORS;

DEPOSITION;

EID: 67650484678 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0704-8 Document Type: Conference Paper

Times cited : (64)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.