Raman scattering investigation of Bi2Te3 hexagonal nanoplates prepared by a solvothermal process in the absence of NaOH

Journal of Alloys and Compounds

Volumn 509, Issue 16, 2011, Pages 5147-5151

  Liang, Yujie ^a   Wang, Wenzhong ^a,b   Zeng, Baoqing ^a   Zhang, Guling ^b   Huang, Jing ^b   Li, Jin ^b   Li, Te ^b   Song, Yangyang ^b   Zhang, Xiuyu ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b MINZU UNIVERSITY OF CHINA   (China)

Author keywords

Crystal growth; Crystal structure; Nanostructured materials; Optical spectroscopy; Thermoelectric materials

Indexed keywords

ACTIVE MODE; AS-GROWN; BULK CRYSTALS; INVERSION SYMMETRY; MICRO RAMAN SPECTROSCOPY; MORPHOLOGY AND SIZE; NANOPLATES; ODD-PARITY; OPTICAL SPECTROSCOPY; POTENTIAL APPLICATIONS; POWDER X RAY DIFFRACTION; RAMAN SCATTERING SPECTRA; RAMAN SPECTRUM; SOLVOTHERMAL PROCESS; SYMMETRY-BREAKING; TEM; THERMOELECTRIC DEVICES; THERMOELECTRIC MATERIAL;

CRYSTAL GROWTH; CRYSTALLIZATION; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; OPTICAL PROPERTIES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCATTERING; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTAL SYMMETRY;

EID: 79953037624     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.02.015     Document Type: Article

References (29)

1. C.Y. Li, A.L. Ruoff, and C.W. Spencer J. Appl. Phys. 32 1961 1733
2. H.J. Goldsmid Thermoelectric Refrigeration 1964 Plenum Press New York
3. 3 1972 Nauka Moscow
4. W. Kullmann, J. Geurts, W. Richter, N. Lehner, H. Rauh, U. Steigenberger, G. Eichhorn, and R. Geick Phys. Stat. Sol. B 125 1984 131
5. L.D. Hicks, and M.S. Dresselhaus Phys. Rev. B 47 1993 12727
6. L.D. Hicks, and M.S. Dresselhaus Phys. Rev. B 47 1993 16631
7. T.M. Tritt Science 283 1999 804
8. D.Y. Chung, T. Hogan, P. Brazis, M. Rocci-Lane, C. Kannewurf, M. Bastea, C. Uher, and M.G. Kanatzidis Science 287 2000 1024
9. H.T. Zhang, X.G. Luo, C.H. Wang, Y.M. Xiong, S.Y. Li, and X.H. Chen J. Cryst. Growth 265 2004 558
10. J.R. Ota, P. Roy, S.K. Srivastava, R. Popovitz-Biro, and R. Tenne Nanotechnology 17 2006 1700
11. J.H. Zhou, C.G. Jin, J.H. Seol, and L. Shi Appl. Phys. Lett. 87 2005 133109
12. F. Xiao, B. Yoo, K.H. Lee, and N.V. Myung J. Am. Chem. Soc. 129 2007 10068
13. Y. Jiang, and Y.J. Zhu J. Cryst. Growth 306 2007 351
14. G.Q. Zhang, W. Wang, X.L. Lu, and X.G. Li Cryst. Growth Des. 9 2009 145
15. M. Salavati-Niasari, M. Bazarganipour, and F. Davar J. Alloys Compd. 489 2010 530
16. G.R. Li, F.L. Zheng, and Y.X. Tong Cryst. Growth Des. 8 2008 1226
17. Y. Deng, C.W. Nan, N.L. Zhang, T.H. Ji, Q.L. Yang, and L. Guo Solid State Commun. 138 2006 111
18. W. Kullmann, J. Geurts, W. Richter, N. Lehner, H. Rauh, U. Steigenberger, G. Eichhorn, and G. Reick Phys. Stat. Sol. B 125 1984 131
19. I.H. Campbell, and P.M. Fauchet Solid State Commun. 58 1986 739
20. M. Yoshikawa, Y. Mori, H. Obata, M. Maegawa, G. Katagira, and H. Ishida Appl. Phys. Lett. 67 1995 694
21. Z. Jian, H. IBuscher, C. Falter, W. Ludwig, K. Zhang, and X. Xie Appl. Phys. Lett. 69 1996 200
22. G.W. Graham, W.H. Wfber, C.R. Peters, and R. Vsmen J. Catal. 130 1991 310
23. W.Z. Wang, and L. Ao Cryst. Growth Des. 8 2008 358
24. W.Z. Wang, Y. Zhuang, and L. Li Mater. Lett. 62 2008 1014
25. W. Richter, and C.R. Becker Phys. Stat. Sol. B 84 1977 619
26. P.Y. Yu, and M. Cardona Fundamentals of Semiconductors Physics and Materials Properties 2005 Springer
27. V. Russo, A. Bailini, M. Zamboni, M. Passoni, C. Conti, C.S. Casari, A. Bassi, and C.E. Bottani J. Raman Spectrosc. 39 2008 205
28. L.M. Goncalves, C. Couto, P. Alpuim, A.G. Rolo, F. Völklein, and J.H. Correia Thin Solid Films 518 2010 2816
29. V. Wagner, G. Dolling, B.M. Powell, and G. Landweher Phys. Stat. Sol. B 85 1978 311