Thermoelectric properties of n-type Bi2Te2.7Se0.3 and p-type Bi0.5Sb1.5Te3 thin films deposited by direct current magnetron sputtering

Thin Solid Films

Volumn 516, Issue 23, 2008, Pages 8579-8583

  Bourgault, D ^a,b   Garampon, C Giroud ^a   Caillault, N ^a   Carbone, L ^a   Aymami, J A ^a  

^a SCHNEIDER ELECTRIC   (France)

^b CNRS   (France)

Author keywords

Deposition methods of thin films (81.15. z); Electrical conductivity; Electrical conductivity of thin films (73.50. h); Magnetron sputtering; Thermoelectric effect of thin films (73.50Lw); Thermoelectric properties; Thin film; X ray diffraction

Indexed keywords

BISMUTH PLATING; THICK FILMS;

DEPOSITION METHODS OF THIN FILMS (81.15.-Z); DIRECT CURRENT MAGNETRON SPUTTERING; ELECTRICAL CONDUCTIVITY; ELECTRICAL CONDUCTIVITY OF THIN FILMS (73.50.-H); THERMOELECTRIC EFFECT OF THIN FILMS (73.50LW); THERMOELECTRIC PROPERTIES; THIN FILM; THIN FILMS; X-RAY DIFFRACTION;

MAGNETRON SPUTTERING;

EID: 50849144839     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.06.001     Document Type: Article

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