Physical properties of Bi2Te3 and Sb 2Te3 films deposited by close space vapor transport

Semiconductor Science and Technology

Volumn 24, Issue 2, 2009, Pages

  Vigil Galan O ^a   Cruz Gandarilla, F ^a   Fandio J ^b   Roy, F ^a,c   Sastre Hernandez J ^a   Contreras Puente, G ^a  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DE LA CIUDAD DE MÉXICO   (Mexico)

^c ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; FILM GROWTH; TELLURIUM COMPOUNDS;

ANTIMONY TELLURIDE; BISMUTH TELLURIDE; CLOSE SPACE VAPOR TRANSPORTS; FILM PROPERTIES; NEAR STOICHIOMETRIC; POWER FACTORS; SUBSTRATE TEMPERATURE; SUBSTRATE THERMAL GRADIENT;

BISMUTH COMPOUNDS;

EID: 65549154416     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/2/025025     Document Type: Article

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