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Journal of Vacuum Science and Technology B

Volumn 28, Issue 3, 2010, Pages

Highly stacked InGaAs quantum dot structures grown with two species of As

(4) Sugaya, Takeyoshi a Amano, Takeru a Mori, Masahiko a Niki, Shigeru a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GROWTH RATE; INDIUM ALLOYS; MOLECULAR BEAM EPITAXY; NANOCRYSTALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM DOTS;

COMPENSATION TECHNIQUES; CRYSTAL QUALITIES; GROWN STRUCTURES; GROWTH DIRECTIONS; HIGH GROWTH-RATE; INGAAS QUANTUM DOTS; INGAAS-QD; MOLECULAR-BEAM EPITAXY; QUANTUM DOT STRUCTURE; STRAIN COMPENSATION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 77952982054 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3289124 Document Type: Conference Paper

Times cited : (14)

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