|
Volumn 42, Issue 10, 2010, Pages 2735-2738
|
Formation of InAs quantum dots at ultrahigh growth rates
|
Author keywords
[No Author keywords available]
|
Indexed keywords
GROWTH CONDITIONS;
GROWTH INTERRUPTION;
HIGH GROWTH RATE;
HIGH QUALITY;
HIGH RATE;
INAS QUANTUM DOTS;
LOW GROWTH RATE;
LOW TEMPERATURES;
QUANTUM DOTS;
ROOM TEMPERATURE;
FABRICATION;
GROWTH RATE;
INDIUM ARSENIDE;
OPTICAL WAVEGUIDES;
SEMICONDUCTOR QUANTUM DOTS;
|
EID: 77957979167
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2010.05.023 Document Type: Conference Paper |
Times cited : (16)
|
References (11)
|