Photoluminescence characteristics of quantum dots with electronic states interconnected along growth direction

Journal of Applied Physics

Volumn 103, Issue 11, 2008, Pages

  Kojima, Osamu ^a   Nakatani, Hiroaki ^a   Kita, Takashi ^a   Wada, Osamu ^a   Akahane, Kouichi ^b   Tsuchiya, Masahiro ^b  

^a KOBE UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROACUPUNCTURE; EXCITONS; INDIUM COMPOUNDS; LIGHT EMISSION; LUMINESCENCE; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM WELLS;

AMERICAN INSTITUTE OF PHYSICS (AIP); EDGE SURFACE; ENVELOPE FUNCTIONS; EXCITONIC PHOTOLUMINESCENCE; GROWTH DIRECTIONS; INTENSITY RATIOS; MAGNETIC (CE); MULTIPLE STACKED QUANTUM DOTS; OPTICAL CHARACTERISTICS; OSCILLATOR STRENGTH (OS); PHOTOLUMINESCENCE (PL) DECAY TIME; PHOTOLUMINESCENCE (PL) EMISSIONS; PHOTOLUMINESCENCE (PL) INTENSITY; PHOTOLUMINESCENCE CHARACTERISTICS; QUANTUM DOT (CO); SPACER LAYER THICKNESSES; STRAIN COMPENSATING TECHNIQUE; TRANSVERSE-ELECTRIC (TE) MODES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 45149092942     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2936320     Document Type: Article

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