Structural properties of multi-stacked self-organized InGaAs quantum dots grown on GaAs (3 1 1)B substrate

Journal of Crystal Growth

Volumn 312, Issue 2, 2010, Pages 226-230

  Shoji, Yasushi ^a,c   Oshima, Ryuji ^a,b   Takata, Ayami ^a,b   Okada, Yoshitaka ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

A1. LOW-DIMENSIONAL STRUCTURES; ATOMIC HYDROGEN; DIFFUSE X-RAY SCATTERING; GAAS; GROWTH DIRECTIONS; INCLINATION ANGLES; INGAAS QUANTUM DOTS; LATTICE POINTS; LOCAL STRAIN FIELD; LOW-DIMENSIONAL STRUCTURES; QUANTUM DOTS; RECIPROCAL SPACE MAPPING; SELF-ORGANIZED; SEMI CONDUCTING III-V MATERIALS; STACKED LAYER; STRAIN COMPENSATION; STRAIN FIELDS; VERTICAL ALIGNMENT; VERTICALLY ALIGNED;

ALIGNMENT; CRYSTAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; X RAY SCATTERING;

GALLIUM ALLOYS;

EID: 71649083392     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.053     Document Type: Article

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