A time-resolved, low-noise single-photon image sensor fabricated in deep-submicron CMOS technology

IEEE Journal of Solid-State Circuits

Volumn 47, Issue 6, 2012, Pages 1394-1407

  Gersbach, Marek ^a,b,f   Maruyama, Yuki ^f   Trimananda, Rahmadi ^f   Fishburn, Matt W ^f   Stoppa, David ^c   Richardson, Justin A ^d,e   Walker, Richard ^d   Henderson, Robert ^d   Charbon, Edoardo ^a,f  

^a EPFL   (Switzerland)

^b Meggitt PLC   (United Kingdom)

^c FONDAZIONE BRUNO KESSLER   (Italy)

^d UNIVERSITY OF EDINBURGH   (United Kingdom)

^e DIALOG SEMICONDUCTOR   (Germany)

^f DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

FCS; FLIM; fluorescence correlation spectroscopy; fluorescence lifetime imaging microscopy; single photon avalanche diode; Single photon imaging; SPAD; TDC; time of flight; time resolved imaging; time to digital converter

Indexed keywords

FCS; FLIM; FLUORESCENCE CORRELATION SPECTROSCOPY; FLUORESCENCE LIFETIME IMAGING MICROSCOPY; SINGLE PHOTON AVALANCHE DIODE; SINGLE-PHOTON IMAGING; SPAD; TDC; TIME OF FLIGHT; TIME RESOLVED IMAGING; TIME TO DIGITAL CONVERTERS;

CMOS INTEGRATED CIRCUITS; FABRICATION; FLUORESCENCE; FLUORESCENCE SPECTROSCOPY; FREQUENCY CONVERTERS; IMAGE SENSORS; PIXELS; SENSORS;

PARTICLE BEAMS;

EID: 84861738300     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2012.2188466     Document Type: Article

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