Controlled thin graphitic petal growth on oxidized silicon

Diamond and Related Materials

Volumn 27-28, Issue , 2012, Pages 1-9

  Xiong, Guoping ^a   Hembram, K P S S ^a   Zakharov, Dmitri N ^a   Reifenberger, Ronald G ^a   Fisher, Timothy S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Controlled growth; Graphitic petals; Growth mechanism; Morphology; Plasma CVD; Plasma etching

Indexed keywords

AS-GROWN; CONTROLLED GROWTH; GRAPHITIC PETALS; GROWTH MECHANISMS; HOMOGENEOUS GROWTH; MATERIALS ANALYSIS; MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; NANO SCALE; OXIDIZED SILICON; OXIDIZED SILICON SUBSTRATES; PLASMA POWER; PROCESS VARIATION; RAPID GROWTH; SI SUBSTRATES;

ATOMIC FORCE MICROSCOPY; ELECTRON ENERGY LOSS SPECTROSCOPY; FACTOR ANALYSIS; MORPHOLOGY; NANOTECHNOLOGY; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

SILICON OXIDES;

EID: 84861720930     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2012.05.002     Document Type: Article

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