Growth of carbon nanowalls on a SiO2 substrate by microwave plasma-enhanced chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 2074-2076

  Tanaka, Kei ^a   Yoshimura, Masamichi ^a   Okamoto, Atsuto ^b   Ueda, Kazuyuki ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b Rd Management Section   (Japan)

Author keywords

Carbon nanotube; Carbon nanowall; Growth process; Plasma CVD; SiO2; TEM

Indexed keywords

ELECTRON EMISSION; HYDROGEN; MICROWAVES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SILICA; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CARBON NANOWALLS; GROWTH PROCESS; PLASMA CVD; SIO2;

CARBON NANOTUBES;

EID: 21244476776     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2074     Document Type: Article

References (10)

1. Y. Wu, P. Qiao, T. Chong and Z. Shen: Adv. Matter. 14 (2002) 64.
2. B. Yang, Y. Wu, B. Zhong and Z. Shen: Nano Lett. 2 (2002) 751.
3. Y. Ando, X. Zhao and M. Ohkohchi: Carbon 35 (1997) 153.
4. Z. Zhao, M. Ohkohchi, M. Wang, S. Iijima, T. Ichihashi and Y. Ando: Carbon 35 (1997) 775.
5. T. Hirao, K. Ito, H. Furuta, Y. K. Yap, T. Ikuno, S. Honda, Y. Mori, T. Sasaki and K. Oura: Jpn. J. Appl. Phys. 40 (2001) L631.
6. K. Nishimura, N. Jiang and A. Hiraki: IEICE T. Electron. E86C (2003) 821.
7. M. Hiramatsu, K. Shiji, H. Amano and M. Hori: Appl. Phys. Lett. 84 (2004) 4708.
8. A. N. Obraztsov, A. P. Volkov, K. S. Nagovitsyn, K. Nishimura, K. Morisawa, Y. Nakano and A. Hiraki: J. Phys. D 35 (2002) 357.
9. H. Murakami, M. Hirakawa, C. Tanaka and H. Yamakawa: Appl. Phys. Lett. 76 (2001) 1776.
10. Y. Homma, Y. Kobayashi, T. Ogino and T. Yamashita: Appl. Phys. Lett. 81 (2002) 2261.