High performance flexible organic thin film transistors (OTFTs) with Octadecyltrichlorsilane/Al 2O 3/Poly(4-vinylphenol) multilayer insulators

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 2, 2012, Pages 1348-1352

  Rahman, Mohammad Arifur ^b   Kim, Hyunho ^a   Lee, Young Kyu ^a   Lee, Chiyoung ^a   Nam, Hosoek ^a   Lee, Jang Sik ^a   Soh, Hoesup ^a   Lee, Jong Kwon ^c   Lee, Eun Gu ^d   Lee, Jaegab ^a  

^a Kookmin University   (South Korea)

^b UNIVERSITY OF DHAKA   (Bangladesh)

^c Soonchunhyang University   (South Korea)

^d Chosun University   (South Korea)

Author keywords

Al 2O 3; OTFTs; OTS; UV

Indexed keywords

ATOMIC LAYER DEPOSITED; CRYSTALLINITIES; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; GATE DIELECTRIC STACKS; GATE-LEAKAGE CURRENT; MULTILAYER INSULATORS; ON/OFF RATIO; ORGANIC LAYERS; ORGANIC THIN FILM TRANSISTOR DEVICES; ORGANIC THIN FILM TRANSISTORS; OTFTS; OTS; PENTACENE LAYERS; PENTACENES; SI SUBSTRATES; UV;

ALUMINUM; ATOMIC LAYER DEPOSITION; CONTACT ANGLE; ELECTRIC FIELD EFFECTS; EXCITONS; FIELD EFFECT TRANSISTORS; MONOLAYERS; MULTILAYERS; PHENOLS; PHOTOTRANSISTORS; THIN FILM TRANSISTORS;

GATE DIELECTRICS;

EID: 84861681558     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.4695     Document Type: Conference Paper

References (27)

1. C. D. Sheraw, L. Zhou, J. R. Huang, D. J. Gundlach, T. N. Jackson, M. G. Kane, I. G. Hill, M. S. Hammond, J. Campi, B. K. Greening, J. Francl, and J. West, Appl. Phys. Lett. 80, 1088 (2002).
2. L. Zhou, A. Wanga, S.-C. Wu, J. Sun, S. Park, and T. N. Jackson, Appl. Phys. Lett. 88, 083502 (2006).
3. H. Klauk, U. Zschieschang, J. Pflaum, and M. Halik, Nature (London) 445, 745 (2007).
4. M. S. Oh, D. K. Hwang, K. Lee, S. Im, and S. Yi, Appl. Phys. Lett. 90, 173511 (2007).
5. R. Rotzoll, S. Mohapatra, V. Olariu, R. Wenz, M. Grigas, K. Dimmler, O. Shchekin, and A. Dodabalapur, Appl. Phys. Lett. 88, 123502 (2006).
6. S. Lee, B. Koo, J. Shin, E. Lee, H. Park, and H. Kim, Appl. Phys. Lett. 88, 162109 (2006).
7. S. Y. Park, M. Park, and H. H. Lee, Appl. Phys. Lett. 85, 2283 (2004).
8. S. H. Jin, J. S. Yu, J. W. Kim, C. A. Lee, B. G. Park, and J. D. Lee, SID Digest 34, 1088 (2003).
9. C. Yu, T.-K. Kim, H. Kim, J. Lee, S. J. Cho, H. Sohn, and S. Kim, J. Nanosci. Nanotechnol. 10, 3489 (2010).
10. H. J. Park, S. H. Go, K. W. Lee, and J. G. Lee, Electron. Mater. Lett. 4, 181 (2008).
11. A. Salleo, M. L. Chabinyc, M. S. Yang, and R. A. Street, Appl. Phys. Lett. 81, 4383 (2002).
12. A. R. Völkel, R. A. Street, and D. Knipp, Phys. Rev. B 66, 195336 (2002).
13. H. Sirringhaus, N. Tessler, and R. H. Friend, Synth. Met. 102, 857 (1999).
14. T. C. Gorjanc, I. Levesque, and M. Dlorio, Appl. Phys. Lett. 84, 930 (2004).
15. K. Shankar and T. N. Jackson, J. Mater. Res. 19, 2003 (2004).
16. M. Matters, D. M. de Leeuw, P. T. Herwig, and A. R. Brown, Synth. Met. 102, 998 (1999).
17. D. J. Gundlach, C.-C. S. Kuo, C. Sheraw, J. A. Nichols, and T. N. Jackson, Proc. PIE 3366, 54 (2001).
18. L. A. Majewski, R. Scheroeder, M. Grell, P. A. Glarvey, and M. L. Turner, J. Appl. Phys. 96, 5781 (2004).
19. D. Knipp, R. A. Street, A. Völkel, and J. Ho, J. Appl. Phys. 93, 347 (2003).
20. H. Klauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, and W. Weber, J. Appl. Phys. 92, 5259 (2002).
21. J. Veres, S. D. Ogier, S. W. Leeming, D. C. Cupertino, and S. M. Khaffaf, Adv. Funct. Mater. 13, 199 (2003).
22. A. L. Deman and J. Tardy, Mater. Sci. Eng. C 26, 421 (2006).
23. K. P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D. J. Gundlach, B. Batlogg, A. N. Rashid, and G. Schitter, J. Appl. Phys. 96, 6431 (2004).
24. Q. Qi, A. Yu, L. Wang, and C. Jiang, J. Nanosci. Nanotechnol. 10, 7103 (2010).
25. H. Yoshida, K. Inaba, and N. Sato, Appl. Phys. Lett. 90, 181930 (2007).
26. T. W. Kelley, L. D. Boardman, T. D. Dunbar, D. V. Muyres, M. J. Pellerite, and T. P. Smith, J. Phys. Chem. B 107, 5877 (2003).
27. C. C. Mattheus, G. A. de Wijs, R. A. de Groot, and T. T. M. Palstra, J. Am. Chem. Soc. 125, 6323 (2003).