Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 11, 2010, Pages 7103-7107

  Qi, Qiong ^a,b   Yu, Aifang ^a   Wang, Liangmin ^a   Jiang, Chao ^a  

^a NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Dielectric Surface Energy; Grain Size; Initial Nucleation; Mobility; Organic Field Effect Transistor

Indexed keywords

AVERAGE SIZE; DIELECTRIC SURFACE; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; GRAIN SIZE; GROWTH MODES; INITIAL NUCLEATION; INORGANIC DIELECTRICS; ISLAND SIZE; MOBILITY; NUCLEATION DENSITIES; ON/OFF RATIO; PENTACENE FILM; PENTACENES; SURFACE ENERGIES;

ATOMIC FORCE MICROSCOPY; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; FILM GROWTH; GRAIN SIZE AND SHAPE; INTERFACIAL ENERGY; MONOLAYERS; NUCLEATION; POLYSTYRENES; SURFACE CHEMISTRY; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 79955546729     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2802     Document Type: Conference Paper

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