Crystalline SiN x ultrathin films grown on AlGaN/GaN using in situ metalorganic chemical vapor deposition

Journal of Electronic Materials

Volumn 37, Issue 5, 2008, Pages 628-634

  Takizawa, Toshiyuki ^a   Nakazawa, Satoshi ^a   Ueda, Tetsuzo ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Atomic force microscopy; Electron energy loss spectroscopy; First principles calculation; GaN; Heterojunction field effect transistor; In situ; Metalorganic chemical vapor deposition; SiN x; Transmission electron microscopy

Indexed keywords

FIRST-PRINCIPLES CALCULATIONS; HETEROJUNCTION FIELD-EFFECT TRANSISTORS;

ALUMINUM GALLIUM NITRIDE; CRYSTALLINE MATERIALS; DRAIN CURRENT; ELECTRON ENERGY LOSS SPECTROSCOPY; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

ULTRATHIN FILMS;

EID: 42249108853     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0386-7     Document Type: Conference Paper

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