TSV (through silicon via) interconnection on wafer-on-a-wafer (WOW) with MEMS technology

TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Volumn , Issue , 2009, Pages 1877-1880

  Fujimoto, Koji ^a   Maeda, Nobuhide ^b   Kitada, Hideki ^b   Suzuki, Kosuke ^a   Nakamura, Tomoji ^c   Ohba, Takayuki ^b  

^a DAI NIPPON PRINTING CO LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

BCB; Cu interconnection; CYCLOTENE; Stacking; TSV; Wafer level packaging; WoW

Indexed keywords

ADHESIVE MATERIALS; CU ELECTROPLATING; CYCLOTENE; DEEP REACTIVE ION ETCHING; DIELECTRIC LAYER; ELECTRICAL CHARACTERISTIC; MEMS TECHNOLOGY; ON-WAFER; SI WAFER; STRESS SIMULATIONS; THROUGH-SILICON-VIA; WAFER LEVEL PACKAGING;

ACTUATORS; MEMS; MICROELECTROMECHANICAL DEVICES; MICROSYSTEMS; PIEZOELECTRIC TRANSDUCERS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SOLID-STATE SENSORS; WAFER BONDING;

ELECTRONICS PACKAGING;

EID: 71449102573     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2009.5285713     Document Type: Conference Paper

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