Killer defect detection using the IR-OBIRCH (infrared optical-beam-induced resistance-change) method

1999 IEEE International Symposium on Semiconductor Manufacturing, ISSM 1999 - Conference Proceedings

Volumn , Issue , 1999, Pages 103-106

  Nikawa, K ^a   Inoue, S ^b   Morimoto, K ^c  

^a NEC CORPORATION   (Japan)

^b TDI Co Ltd   (Japan)

^c Naito Densci Kogyo Co   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTERS; ELECTRIC RESISTANCE; MANUFACTURE; MICROCOMPUTERS; SEMICONDUCTOR DEVICE MANUFACTURE; APPLICATION SPECIFIC INTEGRATED CIRCUITS; COMPUTER SIMULATION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC DISCHARGES; ELECTROSTATICS; FAILURE ANALYSIS; IMAGING TECHNIQUES; INDUSTRIAL ELECTRONICS; INFRARED RADIATION; MOSFET DEVICES;

DEFECT DETECTION; FAILURE STATE; MASS PRODUCTION; OPTICAL BEAM INDUCED RESISTANCE CHANGES; POWER MOSFETS; TEST VECTORS; USER TESTS;

POWER MOSFET; SEMICONDUCTOR DEVICE MANUFACTURE;

AUTOMATIC TEST EQUIPMENT (ATE); ELECTROSTATIC DISCHARGES (ESD); INFRARED OPTICAL-BEAM-INDUCED RESISTANCE-CHANGE (IR-OBIRCH) IMAGING;

EID: 0033338811     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSM.1999.808748     Document Type: Conference Paper

References (8)

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