Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching

IEEE Transactions on Magnetics

Volumn 48, Issue 6, 2012, Pages 2016-2024

  Mojumder, Niladri N ^a,b   Abraham, David W ^a   Roy, Kaushik ^b   Worledge, D C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Purdue University   (United States)

Author keywords

Magnetic memories; magnetization reversal; magnetoresistance

Indexed keywords

CIRCUIT DESIGNS; CURRENT PULSE; ELECTRIC CURRENT PULSE; FREE LAYERS; HIGHER INTEGRATION; IMPROVED RELIABILITY; LOW POWER; MAGNETIC MEMORIES; MAGNETIC RANDOM ACCESS MEMORIES; NON-VOLATILE; PERPENDICULAR MAGNETIC ANISOTROPY; READ MARGIN; SPIN TRANSFER TORQUE; SWITCHING CURRENT DENSITY; SWITCHING ENERGY; SWITCHING ERRORS; TUNNEL BARRIER;

CURRENT DENSITY; ELECTRIC RESISTANCE; ENERGY EFFICIENCY; MAGNETIC STORAGE; MAGNETIZATION REVERSAL; MAGNETORESISTANCE;

MRAM DEVICES;

EID: 84861490478     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2011.2179982     Document Type: Article

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