SCOPUS 정보 검색 플랫폼

Volumn 109, Issue 7, 2011, Pages

Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory

(12) Zhao, H a Lyle, A a Zhang, Y a Amiri, P K b Rowlands, G c Zeng, Z b Katine, J d Jiang, H b Galatsis, K b Wang, K L b Krivorotov, I N c Wang, J P a

a University of Minnesota (United States)

b UNIVERSITY OF CALIFORNIA (United States)

c UNIVERSITY OF CALIFORNIA (United States)

d SAN JOSE RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT MEASUREMENTS; ENERGY CONSUMPTION; FAST MEMORY; FIELD MEASUREMENT; IN-PLANE; MAGNETIC TUNNEL JUNCTION; RANDOM ACCESS MEMORIES; RESISTANCE-AREA PRODUCTS; SPIN TORQUE TRANSFER; STATE SWITCHING; THERMAL STABILITY; TUNNELING MAGNETORESISTANCE; ULTRA-FAST;

ELECTRIC RESISTANCE; ENERGY UTILIZATION; MAGNETIC DEVICES; MAGNETORESISTANCE; OPTIMIZATION; SWITCHING; TORQUE; TUNNEL JUNCTIONS;

RANDOM ACCESS STORAGE;

EID: 79955402162 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3556784 Document Type: Conference Paper

Times cited : (110)

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