Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films

Progress in Natural Science: Materials International

Volumn 22, Issue 1, 2012, Pages 1-6

  Buchholz, D B ^a   Proffit, D E ^a   Wisser, M D ^a   Mason, T O ^a   Chang, R P H ^a  

^a Northwestern University   (United States)

Author keywords

Amorphous; Deposition temperature; Oxide; Semiconductor; Transparent conducting oxide

Indexed keywords

AMORPHOUS FILMS; CARRIER CONCENTRATION; ENERGY GAP; INDIUM COMPOUNDS; OXIDE SEMICONDUCTORS; PULSED LASER DEPOSITION; THIN FILMS; TIN OXIDES;

BANDGAP PROPERTIES; CO SUBSTITUTION; COSUBSTITUTION; DEPOSITION TEMPERATURES; INDIUM TIN OXIDE FILMS; INDIUM TIN OXIDE THIN FILMS; MATERIAL COMPOSITIONS; MOLAR PROPORTIONS; PULSED-LASER DEPOSITION; TRANSPARENT CONDUCTING OXIDE;

TRANSPARENT CONDUCTING OXIDES;

EID: 84861455177     PISSN: 10020071     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.pnsc.2011.12.001     Document Type: Article

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